El Dr. Alejandro Trejo se graduó de doctorado en Comunicaciones y Electrónica en el 2015 en la Escuela Superior de Ingeniería Mecánica y Eléctrica unidad Culhuacan, desde el 2016 hasta la fecha realiza investigación sobre las propiedades electrónicas, ópticas y vibracionales de semiconductores binarios nanoestructurados, y sus posibles aplicaciones en fuentes alternas de energía en celdas solares, almacenamiento de energía, y emisión de fotones únicos para computación y comunicaciones cuánticas. Ha publicado más de 30 artículos en revistas internacionales indizadas en el JCR y ha participado en más de 50 congresos nacionales e internacionales, con trabajos en modalidad, poster, oral y conferencia magistral. Ha graduado a 9 estudiantes de maestría y asesorado dos proyectos terminales de licenciatura. Se encuentra asesorando o co-asesorando actualmente dos tesis del doctorado en Energía y una en el Doctorado en Comunicaciones y Electrónica. Entre sus reconocimientos se encuentran: Investigador nacional nivel 1 del sistema nacional de investigadores desde el 2015 hasta la fecha, ganador premio a la investigación del instituto politécnico nacional en la modalidad de Investigación realizada por jóvenes investigadores, dos veces ganador de la Presea Lázaro Cárdenas por mejor aprovechamiento en maestría y doctorado, Premio a la mejor Tesis de Maestría del Instituto Politécnico Nacional, Premio a la Mejor tesis de doctorado del Instituto de Investigaciones en Materiales de La Universidad Nacional Autónoma de México, mención honorífica en su examen de grado de Maestría y Doctorado, y en el examen profesional de Licenciatura. Miembro de las redes de Energía y Micro y Nano tecnología del Instituto Politécnico Nacional.
Enlaces a perfiles en distintas plataformas:
Santana, José Eduardo; Sosa, Akari Narayama; Santiago, Francisco De; Miranda, Álvaro; Pérez, Luis Antonio; Trejo, Alejandro; Salazar, Fernando; Cruz-Irisson, Miguel
Highly sensitive amphetamine drug detection based on silicon nanowires: Theoretical investigation Artículo de revista
En: Surfaces and Interfaces, vol. 36, pp. 102584, 2023, ISSN: 2468-0230.
Resumen | Enlaces | BibTeX | Etiquetas: Amphetamine, DFT, Doping, Drug, Sensor, Silicon nanowires
@article{SANTANA2023102584,
title = {Highly sensitive amphetamine drug detection based on silicon nanowires: Theoretical investigation},
author = {Jos\'{e} Eduardo Santana and Akari Narayama Sosa and Francisco De Santiago and \'{A}lvaro Miranda and Luis Antonio P\'{e}rez and Alejandro Trejo and Fernando Salazar and Miguel Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S2468023022008392},
doi = {https://doi.org/10.1016/j.surfin.2022.102584},
issn = {2468-0230},
year = {2023},
date = {2023-01-01},
journal = {Surfaces and Interfaces},
volume = {36},
pages = {102584},
abstract = {Amphetamine (AA) is used in some therapeutic treatments, but it is also one of the most widely used illicit drugs. Therefore, a correct tracking of AA in various environments is crucial for its controlled distribution even inside the human body. However, current sensors are still too large to fit inside the human body and their biocompatibility is still deficient. Since the discovery of nanostructures, especially silicon nanowires (SiNWs), the possibilities of sensors inside the human body have increased due to their enhanced properties and biocompatibility. However, theoretical studies about the capabilities of SiNWs with surface modifications as sensing materials are still scarce. Using Density Functional Theory, we investigate the effects of amphetamine adsorption on the work function, and other electronic and structural properties, of pristine and modified SiNWs. Two types of modifications were studied, i.e., substitutional doping with B, Al, and Ga atoms and surface functionalization with the same species. The adsorption energies of the amphetamine molecule are larger for the doped nanowires, followed by the functionalized ones, and lastly, the undoped Si nanowire.This study shows that undoped, doped, and functionalized SiNWs are excellent candidates for AA sensing, with B being the best chemical species for improving AA adsorption for both doped and functionalized schemes.},
keywords = {Amphetamine, DFT, Doping, Drug, Sensor, Silicon nanowires},
pubstate = {published},
tppubtype = {article}
}
Arellano, Lucia Guadalupe; Salazar, Fernando; Miranda, Álvaro; Trejo, Alejandro; Pérez, Luis Antonio; Nakamura, Jun; Cruz-Irisson, Miguel
Tunable electronic properties of silicon nanowires as sodium-battery anodes Artículo de revista
En: International Journal of Energy Research, vol. 46, no 12, pp. 17151-17162, 2022.
Resumen | Enlaces | BibTeX | Etiquetas: DFT, Silicon nanowires, sodium-ion batteries
@article{https://doi.org/10.1002/er.8378,
title = {Tunable electronic properties of silicon nanowires as sodium-battery anodes},
author = {Lucia Guadalupe Arellano and Fernando Salazar and \'{A}lvaro Miranda and Alejandro Trejo and Luis Antonio P\'{e}rez and Jun Nakamura and Miguel Cruz-Irisson},
url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/er.8378},
doi = {https://doi.org/10.1002/er.8378},
year = {2022},
date = {2022-01-01},
journal = {International Journal of Energy Research},
volume = {46},
number = {12},
pages = {17151-17162},
abstract = {Summary Although materials for lithium-ion batteries have been extensively studied, alternatives such as sodium-ion batteries have acquired a renewed interest due to the abundance of Na compared to Li. However, the investigation of new materials for Na battery anodes is still in progress. In this work, a density functional study of the electronic properties of hydrogen passivated silicon nanowires (H-SiNWs) with interstitial Na atoms is presented. The studied H-SiNWs are grown along the [001] crystallographic direction and have a diameter close to 2.5 nm. Moreover, from 1 to 12 interstitial Na atoms per H-SiNW unit cell were considered. The results reveal that the former semiconducting nanowires become metallic for all the Na concentrations, even for the case of a single Na atom. The formation energy diminishes as a function of the concentration of Na atoms, revealing a loss of energetic stability since the size of the Na atoms strongly modify the Si-Si bonds. Moreover, when the Na atoms are removed from the metallic sodiated H-SiNW and relaxed again, for concentrations between 1 and 8 Na atoms, the resulting structure corresponds to the original H-SiNW one, indicating that the Na insertion/extraction process is a reversible one. In contrast, for concentrations between 10 and 12 Na atoms, the structure that results from removing of these Na atoms has a different atomic arrangement, in comparison with the initial H-SiNW, and also smaller band gap. These results open the possibility to consider the H-SiNWs as potential anodic materials in sodium rechargeable batteries.},
keywords = {DFT, Silicon nanowires, sodium-ion batteries},
pubstate = {published},
tppubtype = {article}
}
Santiago, Francisco; Santana, José Eduardo; Miranda, Álvaro; Trejo, Alejandro; Vázquez-Medina, Rubén; Pérez, Luis Antonio; Cruz-Irisson, Miguel
Quasi-one-dimensional silicon nanostructures for gas molecule adsorption: a DFT investigation Artículo de revista
En: Applied Surface Science, vol. 475, pp. 278-284, 2019, ISSN: 0169-4332.
Resumen | Enlaces | BibTeX | Etiquetas: Chemical sensors, Density Functional Theory, Molecule adsorption, porous silicon, Sensing, Silicon nanowires
@article{DESANTIAGO2019278,
title = {Quasi-one-dimensional silicon nanostructures for gas molecule adsorption: a DFT investigation},
author = {Francisco Santiago and Jos\'{e} Eduardo Santana and \'{A}lvaro Miranda and Alejandro Trejo and Rub\'{e}n V\'{a}zquez-Medina and Luis Antonio P\'{e}rez and Miguel Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S0169433218336109},
doi = {https://doi.org/10.1016/j.apsusc.2018.12.258},
issn = {0169-4332},
year = {2019},
date = {2019-01-01},
journal = {Applied Surface Science},
volume = {475},
pages = {278-284},
abstract = {Porous structures offer an enormous surface suitable for gas sensing, however, the effects of their quantum quasi-confinement on their molecular sensing capacities has been seldom studied. In this work the gas-sensing capability of silicon nanopores is investigated by comparing it to silicon nanowires using first principles calculations. In particular, the adsorption of toxic gas molecules CO, NO, SO2 and NO2 on both silicon nanopores and nanowires with the same cross sections was studied. Results show that sensing-related properties of silicon nanopores and nanowires are very similar, suggesting that surface effects are predominant over the confinement. However, there are certain cases where there are remarked differences between the nanowire and porous cases, for instance, CO-adsorbed nanoporous silicon shows a metallic band structure unlike its nanowire counterpart, which remains semiconducting, suggesting that quantum quasi-confinement may be playing an important role in this behaviour. These results are significant in the study of the quantum phenomena behind the adsorption of gas molecules on nanostructure’s surfaces, with possible applications in chemical detectors or catalysts.},
keywords = {Chemical sensors, Density Functional Theory, Molecule adsorption, porous silicon, Sensing, Silicon nanowires},
pubstate = {published},
tppubtype = {article}
}
Santiago, F. De; González, J. E.; Miranda, A.; Trejo, A.; Salazar, F.; Pérez, L. A.; Cruz-Irisson, M.
Lithiation effects on the structural and electronic properties of Si nanowires as a potential anode material Artículo de revista
En: Energy Storage Materials, vol. 20, pp. 438-445, 2019, ISSN: 2405-8297.
Resumen | Enlaces | BibTeX | Etiquetas: electronic properties, Li batteries, Silicon nanowires, Young's modulus
@article{DESANTIAGO2019438,
title = {Lithiation effects on the structural and electronic properties of Si nanowires as a potential anode material},
author = {F. De Santiago and J. E. Gonz\'{a}lez and A. Miranda and A. Trejo and F. Salazar and L. A. P\'{e}rez and M. Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S2405829718313254},
doi = {https://doi.org/10.1016/j.ensm.2019.04.023},
issn = {2405-8297},
year = {2019},
date = {2019-01-01},
journal = {Energy Storage Materials},
volume = {20},
pages = {438-445},
abstract = {The need for better energy-storage materials has attracted much attention to the development of Li-ion battery electrodes. Si nanowires have been considered as alternative electrodes, however the effects of Li on their electronic band gap and mechanical properties have been scarcely studied. In this work, a density functional study of the electronic and mechanical properties of hydrogen passivated silicon nanowires (H-SiNWs) grown along the [001] direction is presented. The Li atoms are gradually inserted at interstitial positions or replacing surface H atoms. The results show that, for surface-lithiated H-SiNWs, the semiconducting band gap decreases when the concentration of Li atoms increases; whereas the H-SiNWs become metallic even with the addition of only one interstitial Li atom. The formation energy diminishes with the concentration of Li atoms for surface-lithiated H-SiNWs, whereas the contrary behavior is found in the interstitial-lithiated H-SiNWs. Furthermore, for the surface-lithiation case, the Li binding energy reveals the existence of SiLi bonds, whereas for the interstitial-lithiation case, the Li binding energy increases when the Li grows up to a critical concentration, where some SiSi bonds break. Finally, for the case of surface-lithiation, the Young's modulus (Y) increases with the concentration of Li, whereas for the interstitial-lithiation case, Y suffers a sudden diminution at a certain Li concentration due to the large internal mechanical stresses within the nanowire structure. These results should be considered when regarding H-SiNWs as potential electrodes in Li-ion battery anodes.},
keywords = {electronic properties, Li batteries, Silicon nanowires, Young's modulus},
pubstate = {published},
tppubtype = {article}
}
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