Dr Miguel Cruz Irisson

@article{https://doi.org/10.1002/andp.201000144,

title = {Proper quantization rule as a good candidate to semiclassical quantization rules},

author = {F. A. Serrano and M. Cruz-Irisson and S. -H. Dong},

url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/andp.201000144},

doi = {https://doi.org/10.1002/andp.201000144},

year  = {2011},

date = {2011-01-01},

urldate = {2011-01-01},

journal = {Annalen der Physik},

volume = {523},

number = {10},

pages = {771-782},

abstract = {Abstract In this article, we present proper quantization rule, ∫k(x) dx - ∫k0(x) dx = nπ, where $k(x) = sqrt2 M [E-V(x) ]/hbar$ and study solvable potentials. We find that the energy spectra of solvable systems can be calculated only from its ground state obtained by the Sturm-Liouville theorem. The previous complicated and tedious integral calculations involved in exact quantization rule are greatly simplified. The beauty and simplicity of proper quantization rule come from its meaning \textendash whenever the number of the nodes of the logarithmic derivative ϕ(x) = ψ(x)-1dψ(x) /dx or the number of the nodes of the wave function ψ(x) increases by one, the momentum integral will increase by π. We apply two different quantization rules to carry out a few typically solvable quantum systems such as the one-dimensional harmonic oscillator, the Morse potential and its generalization as well as the asymmetrical trigonometric Scarf potential and show a great advantage of the proper quantization rule over the original exact quantization rule.},

keywords = {bound states, Proper quantization rule, solvable potentials.},

pubstate = {published},

tppubtype = {article}

}

@article{C0NR00623H,

title = {Raman scattering by confined optical phonons in Si and Ge nanostructures},

author = {Pedro Alfaro and Rodolfo Cisneros and Monserrat Bizarro and Miguel Cruz-Irisson and Chumin Wang},

url = {http://dx.doi.org/10.1039/C0NR00623H},

doi = {10.1039/C0NR00623H},

year  = {2011},

date = {2011-01-01},

urldate = {2011-01-01},

journal = {Nanoscale},

volume = {3},

issue = {3},

pages = {1246-1251},

publisher = {The Royal Society of Chemistry},

abstract = {A microscopic theory of the Raman scattering based on the local bond-polarizability model is presented and applied to the analysis of phonon confinement in porous silicon and porous germanium, as well as nanowire structures. Within the linear response approximation, the Raman shift intensity is calculated by means of the displacement\textendashdisplacement Green\'s function and the Born model, including central and non-central interatomic forces. For the porous case, the supercell method is used and ordered pores are produced by removing columns of Si or Ge atoms from their crystalline structures. This microscopic theory predicts a remarkable shift of the highest-frequency of first-order Raman peaks towards lower energies, in comparison with the crystalline case. This shift is discussed within the quantum confinement framework and quantitatively compared with the experimental results obtained from porous silicon samples, which were produced by anodizing p−-type (001)-oriented crystalline Si wafers in a hydrofluoric acid bath.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{https://doi.org/10.1002/qua.22647,

title = {Chemical surface passivation of 3C-SiC nanocrystals: A first-principle study},

author = {A. Trejo and M. Calvino and M. Cruz-Irisson},

url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/qua.22647},

doi = {https://doi.org/10.1002/qua.22647},

year  = {2010},

date = {2010-01-01},

journal = {International Journal of Quantum Chemistry},

volume = {110},

number = {13},

pages = {2455-2461},

abstract = {Abstract The effect of the chemical surface passivation, with hydrogen atoms, on the energy band gap of porous cubic silicon carbide (PSiC) was investigated. The pores are modeled by means of the supercell technique, in which columns of Si and/or C atoms are removed along the [001] direction. Within this supercell model, morphology effects can be analyzed in detail. The electronic band structure is performed using the density functional theory based on the generalized gradient approximation. Two types of pores are studied: C-rich and Si-rich pores surface. The enlargement of energy band gap is greater in the C-rich than Si-rich pores surface. This supercell model emphasizes the interconnection between 3C-SiC nanocrystals, delocalizing the electronic states. However, the results show a clear quantum confinement signature, which is contrasted with that of nanowire systems. The calculation shows a significant response to changes in surface passivation with hydrogen. The chemical tuning of the band gap opens the possibility plenty applications in nanotechnology. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem 110:2455\textendash2461, 2010},

keywords = {Density Functional Theory, Porous silicon carbide, silicon carbide nanowires},

pubstate = {published},

tppubtype = {article}

}

@article{https://doi.org/10.1002/qua.22753,

title = {Hydrogen surface passivation of Si and Ge nanowires: A semiempirical approach},

author = {A. Miranda and F. A. Serrano and R. V\'{a}zquez-Medina and M. Cruz-Irisson},

url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/qua.22753},

doi = {https://doi.org/10.1002/qua.22753},

year  = {2010},

date = {2010-01-01},

urldate = {2010-01-01},

journal = {International Journal of Quantum Chemistry},

volume = {110},

number = {13},

pages = {2448-2454},

abstract = {Abstract A semiempirical nearest-neighbor tight-binding approach, that reproduces the indirect band gaps of elemental semiconductors, has been applied to study the electronic and optical properties of Si and Ge nanowires (NWs). The calculations show that Si-NWs keep the indirect bandgap whereas Ge-NWs changes into the direct bandgap when the wire cross section becomes smaller. Also, the band gap enhancement of Si-NWs showing to quantum confinement effects is generally larger than that of similar-sized Ge-NWs, confirming the larger quantum confinement effects in Si than in Ge when they are confined in two dimensions. Finally, the dependence of the imaginary part of the dielectric function on the quantum confinement within two different schemes: intra-atomic and interatomic optical matrix elements are applied. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem 110:2448\textendash2454, 2010},

keywords = {Germanium, Nanowires, optical properties, silicon, Tight-binding},

pubstate = {published},

tppubtype = {article}

}

@article{doi:10.1021/nl101894q,

title = {Molecular Doping and Subsurface Dopant Reactivation in Si Nanowires},

author = {\'{A}lvaro Miranda-Dur\'{a}n and Xavier Cartoix\`{a} and Miguel Cruz Irisson and Riccardo Rurali},

url = {https://doi.org/10.1021/nl101894q},

doi = {10.1021/nl101894q},

year  = {2010},

date = {2010-01-01},

urldate = {2010-01-01},

journal = {Nano Letters},

volume = {10},

number = {9},

pages = {3590-3595},

note = {PMID: 20734978},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{miranda2009molecular,

title = {Molecular doping in Silicon Nanowires: an ab-initio study},

author = {Alvaro Miranda and Xavier Cartoix\`{a} and Miguel Cruz-Irisson and Riccardo Rurali},

url = {https://tntconf.org/2009/Abstracts/Posters/TNT2009_Miranda.pdf},

year  = {2009},

date = {2009-11-07},

urldate = {2009-11-07},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{MIRANDA2009456,

title = {Optical matrix elements in tight-binding approach of hydrogenated Si nanowires},

author = {A. Miranda and R. V\'{a}zquez and A. D\'{i}az-M\'{e}ndez and M. Cruz-Irisson},

url = {https://www.sciencedirect.com/science/article/pii/S0026269208002565},

doi = {https://doi.org/10.1016/j.mejo.2008.06.018},

issn = {1879-2391},

year  = {2009},

date = {2009-01-01},

urldate = {2009-01-01},

journal = {Microelectronics Journal},

volume = {40},

number = {3},

pages = {456-458},

abstract = {The dependence of the imaginary part of the dielectric function on the quantum confinement within two different schemes: intra-atomic and interatomic optical matrix elements are applied and compared. The optical spectra of Si nanowires are studied by means of a semi-empirical sp3s* tight-binding supercell model. The surface dangling bonds are passivated by hydrogen atoms. The results show that although the intra-atomic matrix elements are small in magnitude, the interference between these terms and the interatomic matrix elements contributes with nearly 25% of the total absorption. Thus, a quantitative treatment of nanostructures may not be possible without the inclusion of intra-atomic matrix elements.},

note = {Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)},

keywords = {Dielectric function, Silicon nanowires, Tight-binding approach},

pubstate = {published},

tppubtype = {article}

}

@article{MIRANDA2009796,

title = {Quantum confinement effects on electronic properties of hydrogenated 3C\textendashSiC nanowires},

author = {A. Miranda and J. L. Cuevas and A. E. Ramos and M. Cruz-Irisson},

url = {https://www.sciencedirect.com/science/article/pii/S0026269208005375},

doi = {https://doi.org/10.1016/j.mejo.2008.11.034},

issn = {1879-2391},

year  = {2009},

date = {2009-01-01},

urldate = {2009-01-01},

journal = {Microelectronics Journal},

volume = {40},

number = {4},

pages = {796-798},

abstract = {In this work, the effect of the morphology on the electronic band structure and density of states of hydrogenated silicon carbide nanowires is studied by using a semiempirical sp3s* tight-binding (TB) approach applied to the supercell model, where the Si- and C-dangling bonds are passivated by hydrogen atoms. The TB results are compared with those of ab-initio density functional theory within the local density approximation, showing that this method gives systematically larger energy gaps than the TB one. As expected, hydrogen saturation induces a broadening of the band gap energy due to quantum confinement effect.},

note = {European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)},

keywords = {Density Functional Theory, Nanowires, Silicon carbide, Tight-binding},

pubstate = {published},

tppubtype = {article}

}

@article{DIAZMENDEZ2009638,

title = {Chaotic noise MOS generator based on logistic map},

author = {A. D\'{i}az-M\'{e}ndez and J. V. Marquina-P\'{e}rez and M. Cruz-Irisson and R. V\'{a}zquez-Medina and J. L. Del-R\'{i}o-Correa},

url = {https://www.sciencedirect.com/science/article/pii/S0026269208003091},

doi = {https://doi.org/10.1016/j.mejo.2008.06.042},

issn = {1879-2391},

year  = {2009},

date = {2009-01-01},

urldate = {2009-01-01},

journal = {Microelectronics Journal},

volume = {40},

number = {3},

pages = {638-640},

abstract = {The Birkhoff\'s ergodic theorem (BET), bifurcation diagram (BD) and Lyapunov\'s exponent (LE) are used in order to design a chaotic noise generator that is governed by the logistic map (LM). For this, a MOS analog circuit that operates in the current-mode, which is based on translinear principle (TLP), is used. To iterate the transference function of this circuit and also to maintain the parameter control of the LM, a current amplifier has been used. The specifications of the design are obtained from the analysis of the model. The results demonstrate the correct operation of the circuit, even when a mismatching of 2% is considered between the devices that control the operation region. The statistical distribution of the output signal on the circuit is similar to uniform distribution and it is related with the parameter value that rules the transfer function of the circuit.},

note = {Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)},

keywords = {Analog noise generator, Chaos, Logistic map},

pubstate = {published},

tppubtype = {article}

}

@article{MIRANDA2009439,

title = {Modelling of electronic and phononic states of Ge nanostructures},

author = {A. Miranda and M. Cruz-Irisson and C. Wang},

url = {https://www.sciencedirect.com/science/article/pii/S0026269208002516},

doi = {https://doi.org/10.1016/j.mejo.2008.06.009},

issn = {1879-2391},

year  = {2009},

date = {2009-01-01},

urldate = {2009-01-01},

journal = {Microelectronics Journal},

volume = {40},

number = {3},

pages = {439-441},

abstract = {The electronic band structure of ordered porous germanium (PGe) and germanium nanowires (GeNW) are studied by means of an sp3s* tight-binding approach. Within the linear response theory, a local bond-polarization model based on the displacement\textendashdisplacement Green\'s function and the Born potential including central and non-central interatomic forces are used to investigate the Raman response and the phonon band structure of PGe and GeNW. This study is carried out by means of a supercell model, in which along the [001] direction empty-column pores and nanowires are constructed preserving the crystalline Ge atomic structure. An advantage of this model is the interconnection between Ge nanocrystals in PGe and then, all the electronic and phononic states are delocalized. However, the results of both elementary excitations show a clear quantum confinement signature. Moreover, the highest-energy Raman peak in both PGe and GeNW shows a shift towards lower frequencies with respect to that of bulk crystalline Ge, in good agreement with the experimental data.},

note = {Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)},

keywords = {Germanium nanowires, porous germanium, Raman response, Tight-binding model},

pubstate = {published},

tppubtype = {article}

}

@article{cruz-irisson2009,

title = {Electronic and Vibrational Properties of Porous Silicon},

author = {Miguel Cruz-Irisson and Chu Min Wang},

doi = {10.4028/www.scientific.net/JNanoR.5.153},

year  = {2009},

date = {2009-01-01},

urldate = {2009-01-01},

journal = {Journal of Nano Research},

volume = {5},

pages = {153\textendash160},

abstract = {For ordered porous silicon, the Born potential and phonon Green’s functions are used to investigate its Raman response, while the electronic band structure and dielectric function are studied by means of a sp3s* tight-binding supercell model, in which periodical pores are produced by removing columns of atoms along [001] direction from a crystalline Si structure and the pores surfaces are passivated by hydrogen atoms for the electronic band structure calculations. This supercell model emphasizes the interconnection between silicon nanocrystals, delocalizing the electronic and phononic states. However, the results of both elementary excitations show a clear quantum confinement signature, which is contrasted with that of nanowire systems. In addition, ab-initio calculations of small supercells are performed in order to verify the tight-binding results. The calculated dielectric function is compared with experimental data. Finally, a shift of the highest-frequency Raman peak towards lower energy is observed, in agreement with the experimental data.},

keywords = {Porous Silicon (PS), Raman scattering, Tight Binding},

pubstate = {published},

tppubtype = {article}

}

@article{article,

title = {A first principle study of the electronic states of hydrogenated β-SiC nanowires},

author = {Estrella Ramos and Marbella Calvino and Miguel Cruz-Irisson},

url = {https://www.researchgate.net/profile/Miguel-Cruz-Irisson/publication/242497695_A_first_principle_study_of_the_electronic_states_of_hydrogenated_b-SiC_nanowires/links/55df3b1508ae2fac4718f6ef/A-first-principle-study-of-the-electronic-states-of-hydrogenated-b-SiC-nanowires.pdf},

year  = {2009},

date = {2009-01-01},

urldate = {2009-01-01},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{guzman2008electronic,

title = {Electronic and optical properties of ordered porous germanium},

author = {David Guzm\'{a}n and Miguel Cruz and Chumin Wang},

url = {https://www.sciencedirect.com/science/article/pii/S0026269207001826},

doi = {https://doi.org/10.1016/j.mejo.2007.07.083},

year  = {2008},

date = {2008-01-01},

urldate = {2008-01-01},

journal = {Microelectronics journal},

volume = {39},

number = {3-4},

pages = {523\textendash525},

publisher = {Elsevier},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{ALFARO2008472,

title = {Vibrational states in low-dimensional structures: An application to silicon quantum wires},

author = {Pedro Alfaro and Miguel Cruz and Chumin Wang},

url = {https://www.sciencedirect.com/science/article/pii/S0026269207001711},

doi = {https://doi.org/10.1016/j.mejo.2007.07.082},

issn = {1879-2391},

year  = {2008},

date = {2008-01-01},

urldate = {2008-01-01},

journal = {Microelectronics Journal},

volume = {39},

number = {3},

pages = {472-474},

abstract = {The Raman scattering in Si nanowires is studied by means of the local bond-polarization model based on the displacement\textendashdisplacement Green\'s function within the linear response theory. In this study, the Born potential, including central and non-central interatomic forces, and a supercell model are used. The results show a notable shift of the main Raman peak towards lower energies, in comparison with the bulk crystalline Si case. This shift is compared with the experimental data and discussed within the quantum confinement framework.},

note = {The Sixth International Conference on Low Dimensional Structures and Devices},

keywords = {Phonons, Raman scattering, Silicon nanowires},

pubstate = {published},

tppubtype = {article}

}

@article{alfaro2008theory,

title = {Theory of Raman scattering by phonons in germanium nanostructures},

author = {Pedro Alfaro-Calder\'{o}n and Miguel Cruz-Irisson and Chumin Wang-Chen},

url = {https://link.springer.com/article/10.1007/s11671-007-9114-0},

doi = {https://doi.org/10.1007/s11671-007-9114-0},

year  = {2008},

date = {2008-01-01},

urldate = {2008-01-01},

journal = {Nanoscale Research Letters},

volume = {3},

pages = {55\textendash59},

publisher = {Springer},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{miranda2007densidad,

title = {Densidad de estados electr\'{o}nicos de nanoalambres de Germanio},

author = {A Miranda and D Guzm\'{a}n and R Vazquez and M Cruz-Irisson and others},

url = {https://www.redalyc.org/pdf/570/57028299015.pdf},

year  = {2007},

date = {2007-01-01},

urldate = {2007-01-01},

journal = {Revista Mexicana de F\'{i}sica},

volume = {53},

number = {5},

pages = {78\textendash82},

publisher = {Sociedad Mexicana de F\'{i}sica AC},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{logvinov2006boundary,

title = {Boundary conditions in theory of photothermal processes},

author = {GN Logvinov and Miguel Cruz Irisson and IM Lashkevych and JE Velazquez and Yu G Gurevich},

url = {https://www.scielo.br/j/bjp/a/9xgX7WDN8FWzXjDdQ8HbgmL/?lang=en},

doi = {https://doi.org/10.1590/S0103-97332006000600079},

year  = {2006},

date = {2006-01-01},

urldate = {2006-01-01},

journal = {Brazilian journal of physics},

volume = {36},

pages = {1097\textendash1100},

publisher = {SciELO Brasil},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{alfaro2006hydrogenated,

title = {Hydrogenated Ge nanocrystals: band gap evolution with increasing size},

author = {P Alfaro and A Miranda and AE Ramos and M Cruz-Irisson},

url = {https://www.scielo.br/j/bjp/a/5QCpMbsDw3Px6S8T5s4nmyf/?lang=en},

doi = {https://doi.org/10.1590/S0103-97332006000300038},

year  = {2006},

date = {2006-01-01},

urldate = {2006-01-01},

journal = {Brazilian journal of physics},

volume = {36},

pages = {375\textendash378},

publisher = {SciELO Brasil},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{cruz2005modeling,

title = {Modeling Raman scattering in porous silicon},

author = {Miguel Cruz and Chumin Wang},

url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200461236},

doi = {https://doi.org/10.1002/pssc.200461236},

year  = {2005},

date = {2005-01-01},

urldate = {2005-01-01},

journal = {physica status solidi (c)},

volume = {2},

number = {9},

pages = {3500\textendash3504},

publisher = {Wiley Online Library},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{alcala2005biocompatible,

title = {A Biocompatible PMMA Encapsulated Vision Prosthesis Case for Silicon Retina},

author = {Alejandra Alcala and Miguel Cruz Irisson and Volodymyr Ponomaryov},

url = {https://www.dl.begellhouse.com/journals/0632a9d54950b268,66fcef0f6e0d427b,7bb3a0150296b0b7.html},

doi = {http://dx.doi.org/10.1615/TelecomRadEng.v64.i12.70},

year  = {2005},

date = {2005-01-01},

urldate = {2005-01-01},

journal = {Telecommunications and Radio Engineering},

volume = {64},

number = {7-12},

publisher = {Begel House Inc.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{alfaro2005microscopic,

title = {A microscopic model for the dielectric function of Ge quantum wires},

author = {P Alfaro and R Vazquez and I Lobota and AE Ramos and M Cruz-Irisson},

url = {http://dspace.nbuv.gov.ua/handle/123456789/138882},

year  = {2005},

date = {2005-01-01},

urldate = {2005-01-01},

journal = {Functional Materials},

publisher = {НТК «Інститут монокристалів» НАН України},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{miranda2005quantum,

title = {Quantum confinement effects in Ge nanocrystals},

author = {A Miranda and AE Ramos and L Nino de Rivera and M Cruz-Irisson},

url = {http://dspace.nbuv.gov.ua/handle/123456789/138881},

year  = {2005},

date = {2005-01-01},

urldate = {2005-01-01},

journal = {Functional Materials},

publisher = {НТК «Інститут монокристалів» НАН України},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{GUZMAN2003487,

title = {Electronic states and optical properties of silicon nanocrystals},

author = {D. Guzm\'{a}n and U. Corona and M. Cruz},

url = {https://www.sciencedirect.com/science/article/pii/S0022231302005872},

doi = {https://doi.org/10.1016/S0022-2313(02)00587-2},

issn = {0022-2313},

year  = {2003},

date = {2003-01-01},

urldate = {2003-01-01},

journal = {Journal of Luminescence},

volume = {102-103},

pages = {487-491},

abstract = {Photoluminescence properties of nanometer Si-based materials have motivated a great deal of experimental and theoretical research effort because they exhibit favourable applications in opto-electronic devices. The quantum confinement effect of photoexcited carriers within nanocrystallites was mainly proposed to be responsible for the visible luminescence from these materials. In this work, the electronic states and optical transition properties of Si nanocrystals are studied by means of an sp3s* semiempirical tight-binding approximation and supercell model, in which the silicon nanocrystals are columns of square cross-section with width from a to 7a, where a is the lattice constant. The calculations have been carried out for light polarized in the [100] direction, i.e., perpendicular to the wire alignment. We present the dependence of the imaginary part of the dielectric function on the quantum confinement within two different schemes, which are applied and compared.},

note = {Proceedings of the 2002 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter},

keywords = {Dielectric constant, Silicon nanocrystals, Tight Binding},

pubstate = {published},

tppubtype = {article}

}

@article{wang2000optical,

title = {Optical absorption in porous silicon},

author = {C Wang and M Cruz and YG Rubo and MR Beltr\'{a}n and J Tag\"{u}e\~{n}a-Mart\'{i}nez},

url = {https://link.springer.com/article/10.1023/A:1009684131340},

doi = {https://doi.org/10.1023/A:1009684131340},

year  = {2000},

date = {2000-01-01},

urldate = {2000-01-01},

journal = {Journal of Porous Materials},

volume = {7},

pages = {279\textendash282},

publisher = {Springer},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{cruz1999supercell,

title = {Supercell approach to the optical properties of porous silicon},

author = {M Cruz and MR Beltr\'{a}n and C Wang and J Tag\"{u}e\~{n}a-Mart\'{i}nez and Yuri G Rubo},

url = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.59.15381},

doi = {https://doi.org/10.1103/PhysRevB.59.15381},

year  = {1999},

date = {1999-01-01},

urldate = {1999-01-01},

journal = {Physical Review B},

volume = {59},

number = {23},

pages = {15381},

publisher = {APS},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{taguena1999tight,

title = {Tight-binding description of disordered nanostructures: an application to porous silicon},

author = {J Tag\"{u}e\~{n}a-Martı́nez and Yuri G Rubo and M Cruz and MR Beltran and C Wang},

url = {https://www.sciencedirect.com/science/article/pii/S0169433298006990},

doi = {https://doi.org/10.1016/S0169-4332(98)00699-0},

year  = {1999},

date = {1999-01-01},

urldate = {1999-01-01},

journal = {Applied surface science},

volume = {142},

number = {1-4},

pages = {564\textendash568},

publisher = {Elsevier},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{beltran1998analysis,

title = {Analysis of the interband transitions in porous silicon},

author = {MR Beltr\'{a}n and M Cruz and C Wang and J Tag\"{u}e\~{n}a-Martı́nez},

url = {https://www.sciencedirect.com/science/article/pii/S0927024897002419},

doi = {https://doi.org/10.1016/S0927-0248(97)00241-9},

year  = {1998},

date = {1998-01-01},

urldate = {1998-01-01},

journal = {Solar energy materials and solar cells},

volume = {52},

number = {3-4},

pages = {261\textendash269},

publisher = {Elsevier},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{cruz1997computational,

title = {COMPUTATIONAL MODELING OF ELECTRONIC AND OPTICAL PROPERTIES IN POROUS SILICON},

author = {M CRUZ and MR BELTR\'{A}N and C WANG and J TAGUENA-MARTiNEZ},

url = {https://www.worldscientific.com/doi/abs/10.1142/9789814529426#page=331},

doi = {https://doi.org/10.1142/9789814529426},

year  = {1997},

date = {1997-01-01},

urldate = {1997-01-01},

publisher = {World Scientific},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{cruz1997efficient,

title = {Efficient non-vertical interband transitions in porous silicon},

author = {M Cruz and MR Beltr\'{a}n and C Wang and J Tag\"{u}e\~{n}a-Mart\'{i}nez},

url = {https://www.sciencedirect.com/science/article/pii/S0378437197001118},

doi = {https://doi.org/10.1016/S0378-4371(97)00111-8},

year  = {1997},

date = {1997-01-01},

urldate = {1997-01-01},

journal = {Physica A: Statistical Mechanics and its Applications},

volume = {241},

number = {1-2},

pages = {382\textendash385},

publisher = {Elsevier},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{cruz1997quasi,

title = {Quasi-confinement, localization and optical properties in porous silicon},

author = {M Cruz and MR Beltran and C Wang and J Tag\"{u}e\~{n}a-Martı́nez},

url = {https://www.sciencedirect.com/science/article/pii/S0040609096093704},

doi = {https://doi.org/10.1016/S0040-6090(96)09370-4},

year  = {1997},

date = {1997-01-01},

urldate = {1997-01-01},

journal = {Thin solid films},

volume = {297},

number = {1-2},

pages = {261\textendash264},

publisher = {Elsevier},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{cruz1994raman,

title = {Raman response of porous silicon},

author = {Miguel Cruz and Chumin Wang},

url = {https://www.sciencedirect.com/science/article/abs/pii/0378437194903697},

doi = {https://doi.org/10.1016/0378-4371(94)90369-7},

year  = {1994},

date = {1994-01-01},

urldate = {1994-01-01},

journal = {Physica A: Statistical Mechanics and its Applications},

volume = {207},

number = {1-3},

pages = {168\textendash173},

publisher = {Elsevier},

keywords = {},

pubstate = {published},

tppubtype = {article}

}