El Dr. Alejandro Trejo se graduó de doctorado en Comunicaciones y Electrónica en el 2015 en la Escuela Superior de Ingeniería Mecánica y Eléctrica unidad Culhuacan, desde el 2016 hasta la fecha realiza investigación sobre las propiedades electrónicas, ópticas y vibracionales de semiconductores binarios nanoestructurados, y sus posibles aplicaciones en fuentes alternas de energía en celdas solares, almacenamiento de energía, y emisión de fotones únicos para computación y comunicaciones cuánticas. Ha publicado más de 30 artículos en revistas internacionales indizadas en el JCR y ha participado en más de 50 congresos nacionales e internacionales, con trabajos en modalidad, poster, oral y conferencia magistral. Ha graduado a 9 estudiantes de maestría y asesorado dos proyectos terminales de licenciatura. Se encuentra asesorando o co-asesorando actualmente dos tesis del doctorado en Energía y una en el Doctorado en Comunicaciones y Electrónica. Entre sus reconocimientos se encuentran: Investigador nacional nivel 1 del sistema nacional de investigadores desde el 2015 hasta la fecha, ganador premio a la investigación del instituto politécnico nacional en la modalidad de Investigación realizada por jóvenes investigadores, dos veces ganador de la Presea Lázaro Cárdenas por mejor aprovechamiento en maestría y doctorado, Premio a la mejor Tesis de Maestría del Instituto Politécnico Nacional, Premio a la Mejor tesis de doctorado del Instituto de Investigaciones en Materiales de La Universidad Nacional Autónoma de México, mención honorífica en su examen de grado de Maestría y Doctorado, y en el examen profesional de Licenciatura. Miembro de las redes de Energía y Micro y Nano tecnología del Instituto Politécnico Nacional.
Enlaces a perfiles en distintas plataformas:
Arellano, Lucia G.; Cid, Brandom J.; Santana, José E.; Santiago, Francisco De; Miranda, Álvaro; Trejo, Alejandro; Salazar, Fernando; Pérez, Luis A.; Cruz-Irisson, Miguel
DFT investigation of metal-decorated silicon carbide nanosheets for the adsorption of NH3 Artículo de revista
En: Materials Today Communications, vol. 36, pp. 106704, 2023, ISSN: 2352-4928.
Resumen | Enlaces | BibTeX | Etiquetas: 2D materials, Ammonia, DFT, Monolayer, Sensor, Silicon carbide
@article{ARELLANO2023106704,
title = {DFT investigation of metal-decorated silicon carbide nanosheets for the adsorption of NH3},
author = {Lucia G. Arellano and Brandom J. Cid and Jos\'{e} E. Santana and Francisco De Santiago and \'{A}lvaro Miranda and Alejandro Trejo and Fernando Salazar and Luis A. P\'{e}rez and Miguel Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S2352492823013958},
doi = {https://doi.org/10.1016/j.mtcomm.2023.106704},
issn = {2352-4928},
year = {2023},
date = {2023-01-01},
journal = {Materials Today Communications},
volume = {36},
pages = {106704},
abstract = {The threat that ammonia (NH3) poses in various human activity environments drives the necessity of sensors of higher sensitivity. Two-dimensional (2D) materials have attracted attention for this particular purpose, with 2D silicon carbide being one prospect for this application. However, this potential use has been relatively unexplored. In this work, we study the adsorption of NH3 on pristine and metal (Li, Na, Mg, Ca, Ag, Au, Cu, Pd, and Ti) decorated silicon carbide monolayers (2D-SiC) using a first-principles approach based on Density-Functional Theory. Energetic analyses were performed to determine the enhancement or deterioration of the NH3 adsorption capacities of the 2D-SiC. The results show that the Ag- and Au-decorated monolayers are the best candidates for NH3 capturing due to the large adsorption energies found in these systems.},
keywords = {2D materials, Ammonia, DFT, Monolayer, Sensor, Silicon carbide},
pubstate = {published},
tppubtype = {article}
}
Arellano, Lucía G.; Santiago, Francisco; Miranda, Álvaro; Salazar, Fernando; Trejo, Alejandro; Pérez, Luis A.; Cruz-Irisson, Miguel
Hydrogen storage capacities of alkali and alkaline-earth metal atoms on SiC monolayer: A first-principles study Artículo de revista
En: International Journal of Hydrogen Energy, vol. 46, no 38, pp. 20266-20279, 2021, ISSN: 0360-3199, (International Journal of Hydrogen Energy Special Issue devoted to the 32nd International Conference ECOS 2019).
Resumen | Enlaces | BibTeX | Etiquetas: 2D monolayers, Adsorption energy, DFT, Hydrogen storage, Silicon carbide
@article{ARELLANO202120266,
title = {Hydrogen storage capacities of alkali and alkaline-earth metal atoms on SiC monolayer: A first-principles study},
author = {Luc\'{i}a G. Arellano and Francisco Santiago and \'{A}lvaro Miranda and Fernando Salazar and Alejandro Trejo and Luis A. P\'{e}rez and Miguel Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S0360319920310144},
doi = {https://doi.org/10.1016/j.ijhydene.2020.03.078},
issn = {0360-3199},
year = {2021},
date = {2021-01-01},
journal = {International Journal of Hydrogen Energy},
volume = {46},
number = {38},
pages = {20266-20279},
abstract = {A detailed theoretical Density-Functional-Theory-based investigation of hydrogen adsorption on silicon carbide monolayers (SiC-ML) decorated with alkali and alkaline-earth metal atoms is presented. The results show that the favourable position for all adsorbed metal atoms is above a Si atom. These metal atoms are chemisorbed to the SiC-ML, except for Mg which is physisorbed. The adsorbed atoms act in turn as adsorption sites for H2 molecules. The single-sided K-functionalized SiC-ML can store up to six H2 molecules. For double-side K-decorated SiC-ML, up to ten H2 molecules can be captured. In all cases, the H2 molecules are physisorbed. This is beneficial because the breaking of chemical bonds, which otherwise would be needed to make use of the stored H2, is energetically expensive. These results find decorated SiC-ML as a promising material for hydrogen storage systems.},
note = {International Journal of Hydrogen Energy Special Issue devoted to the 32nd International Conference ECOS 2019},
keywords = {2D monolayers, Adsorption energy, DFT, Hydrogen storage, Silicon carbide},
pubstate = {published},
tppubtype = {article}
}
Cuevas, J. L.; Trejo, A.; Calvino, M.; Carvajal, E.; Cruz-Irisson, M.
Ab-initio modeling of oxygen on the surface passivation of 3CSiC nanostructures Artículo de revista
En: Applied Surface Science, vol. 258, no 21, pp. 8360-8365, 2012, ISSN: 0169-4332, (VII International Workshop on Semiconductor Surface Passivation, KRAKÓW, POLAND, September 11 - 15, 2011).
Resumen | Enlaces | BibTeX | Etiquetas: Density Functional Theory, Nanowires, Porous semiconductors, Silicon carbide
@article{CUEVAS20128360,
title = {Ab-initio modeling of oxygen on the surface passivation of 3CSiC nanostructures},
author = {J. L. Cuevas and A. Trejo and M. Calvino and E. Carvajal and M. Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S0169433212006289},
doi = {https://doi.org/10.1016/j.apsusc.2012.03.175},
issn = {0169-4332},
year = {2012},
date = {2012-01-01},
journal = {Applied Surface Science},
volume = {258},
number = {21},
pages = {8360-8365},
abstract = {In this work the effect of OH on the electronic states of H-passivated 3CSiC nanostructures, was studied by means of Density Functional Theory. We compare the electronic band structure for a [111]-oriented nanowire with total H, OH passivation and a combination of both. Also the electronic states of a porous silicon carbide case (PSiC) a C-rich pore surface in which the dangling bonds on the surface are saturated with H and OH was studied. The calculations show that the surface replacement of H with OH radicals is always energetically favorable and more stable. In all cases the OH passivation produced a similar effect than the H passivation, with electronic band gap of lower energy value than the H-terminated phase. When the OH groups are attached to C atoms, the band gap feature is changed from direct to indirect. The results indicate the possibility of band gap engineering on SiC nanostructures through the surface passivation species.},
note = {VII International Workshop on Semiconductor Surface Passivation, KRAK\'{O}W, POLAND, September 11 - 15, 2011},
keywords = {Density Functional Theory, Nanowires, Porous semiconductors, Silicon carbide},
pubstate = {published},
tppubtype = {article}
}
© 2022 Grupo de Investigación en Nanociencias de ESIME Culhuacan | All Rights Reserved. | Hecho por Vleeko Agencia de Marketing Digital CDMX
¡Escríbenos!