Estudió la carrera de Ingeniería en Comunicaciones y Electrónica de 1999 a 2003 en la Escuela Superior de Ingeniería en Mecánica y Eléctrica (ESIME) Unidad de Culhuacán del Instituto Politécnico Nacional (IPN). Posteriormente realizo la Maestría en Ciencias de Ingeniería en Microelectrónica del 2004 al 2006 y el Doctorado en Comunicaciones y Electrónica del 2007 al 2010 en la Sección de Estudio de Posgrado e Investigación en la ESIME Culhuacán bajo la dirección del Dr. Miguel Cruz Irisson. Realizó una estancia de investigación en la Universidad Autónoma de Barcelona es España en el 2009 bajo la supervisión del Dr. Riccardo Rurali, como parte de estudios doctorales. Recibió el Premio al mejor desempeño académico del Doctorado en Comunicaciones y Electrónica en el 2008, recibió mención honorífica en su examen de grado del doctorado, así como el ganador al premio a la mejor tesis doctoral 2010 del IPN. El Dr. Miranda realizó una estancia posdoctoral en el Instituto de Ciencias de Materiales de Barcelona España, bajo la dirección del Dr. Enric Canadell del 2011 al 2013, posteriormente regresa a México a realizar una estancia posdoctoral en el Instituto de Física de la UNAM, bajo la supervisión del Dr. Luis Antonio Pérez del 2013 al 2015. En el 2015 ha seleccionado por parte del CONACYT como ganador de una beca de Retención para realizar investigación en el Instituto Politécnico Nacional, posteriormente es contratado por parte del Instituto Politécnico Nacional desde el 2016, con contrato definitivo a partir del 2020. A la fecha ha dirigido 1 tesis doctoral, 10 tesis de maestría, una de licenciatura, actualmente dirige 1 tesis doctoral, 3 tesis de maestría y 2 tesis de licenciatura. Ha publicado un total de 43 artículos científicos. Como resultado de sus estudios doctorales recibió la distinción de Investigador Nacional Nivel I, por parte del Sistema Nacional de Investigadores desde el 2012, nombramiento que tiene vigente a la fecha. Sus intereses en investigación son principalmente el estudio de las propiedades físicas y químicas de sistemas de baja dimensionalidad y sus aplicaciones en la electrónica, en particular como sensores, y en el almacenamiento de energía, tales como almacenamiento de hidrógeno y baterías.
Enlaces a perfiles académicos:
Bermeo-Campos, R.; Madrigal-Carrillo, K.; Perez-Figueroa, S. E.; Calvino, M.; Trejo, A.; Salazar, F.; Miranda, A.; Cruz-Irisson, M.
Surface morphology effects on the mechanical and electronic properties of halogenated porous 3C-SiC: A DFT study Artículo de revista
En: Applied Surface Science, vol. 631, pp. 157481, 2023, ISSN: 0169-4332.
Resumen | Enlaces | BibTeX | Etiquetas: DFT, electronic properties, Halogens, Mechanical properties, Porous SiC
@article{BERMEOCAMPOS2023157481,
title = {Surface morphology effects on the mechanical and electronic properties of halogenated porous 3C-SiC: A DFT study},
author = {R. Bermeo-Campos and K. Madrigal-Carrillo and S. E. Perez-Figueroa and M. Calvino and A. Trejo and F. Salazar and A. Miranda and M. Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S0169433223011595},
doi = {https://doi.org/10.1016/j.apsusc.2023.157481},
issn = {0169-4332},
year = {2023},
date = {2023-01-01},
journal = {Applied Surface Science},
volume = {631},
pages = {157481},
abstract = {Silicon carbide nanostructures have been widely studied due to their potential technological applications. However, the theoretical characterization, especially the effect of the surface on the mechanical properties of this material is still underexplored. In this work, we report the electronic and mechanical properties of 3C-SiC nanopores with different pore surfaces and different passivation schemes using a density functional theory approach and the supercell technique. The nanopores were modeled by removing columns of atoms in the [001] direction, thus creating four types of pores, two with an Only C or Si pore and two with a C or Si-Rich pore surface. All surfaces were passivated with hydrogen, then some atoms of H were replaced with fluorine and chlorine. Results show that pores with a higher concentration of C on the surface have a larger bandgap compared with the Si cases. Moreover, only a few changes can be observed due to passivation. For the mechanical properties the Bulk and Young’s modulus were calculated and show that the Only C structures were the most brittle and, for almost all the pores, the H + Cl passivation improve the Bulk modulus.},
keywords = {DFT, electronic properties, Halogens, Mechanical properties, Porous SiC},
pubstate = {published},
tppubtype = {article}
}
Sosa, Akari Narayama; González, Israel; Trejo, Alejandro; Miranda, Álvaro; Salazar, Fernando; Cruz-Irisson, Miguel
Effects of lithium on the electronic properties of porous Ge as anode material for batteries Artículo de revista
En: Journal of Computational Chemistry, vol. 41, no 31, pp. 2653-2662, 2020.
Resumen | Enlaces | BibTeX | Etiquetas: Density Functional Theory, electronic properties, Li-ion batteries, porous germanium, transition state
@article{https://doi.org/10.1002/jcc.26421,
title = {Effects of lithium on the electronic properties of porous Ge as anode material for batteries},
author = {Akari Narayama Sosa and Israel Gonz\'{a}lez and Alejandro Trejo and \'{A}lvaro Miranda and Fernando Salazar and Miguel Cruz-Irisson},
url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/jcc.26421},
doi = {https://doi.org/10.1002/jcc.26421},
year = {2020},
date = {2020-01-01},
journal = {Journal of Computational Chemistry},
volume = {41},
number = {31},
pages = {2653-2662},
abstract = {Abstract Recently, the need of improvement of energy storage has led to the development of Lithium batteries with porous materials as electrodes. Porous Germanium (pGe) has shown promise for the development of new generation Li-ion batteries due to its excellent electronic, and chemical properties, however, the effect of lithium in its properties has not been studied extensively. In this contribution, the effect of surface and interstitial Li on the electronic properties of pGe was studied using a first-principles density functional theory scheme. The porous structures were modeled by removing columns of atoms in the [001] direction and the surface dangling bonds were passivated with H atoms, and then replaced with Li atoms. Also, the effect of a single interstitial Li in the Ge was analyzed. The transition state and the diffusion barrier of the Li in the Ge structure were studied using a quadratic synchronous transit scheme.},
keywords = {Density Functional Theory, electronic properties, Li-ion batteries, porous germanium, transition state},
pubstate = {published},
tppubtype = {article}
}
Santiago, F. De; González, J. E.; Miranda, A.; Trejo, A.; Salazar, F.; Pérez, L. A.; Cruz-Irisson, M.
Lithiation effects on the structural and electronic properties of Si nanowires as a potential anode material Artículo de revista
En: Energy Storage Materials, vol. 20, pp. 438-445, 2019, ISSN: 2405-8297.
Resumen | Enlaces | BibTeX | Etiquetas: electronic properties, Li batteries, Silicon nanowires, Young's modulus
@article{DESANTIAGO2019438,
title = {Lithiation effects on the structural and electronic properties of Si nanowires as a potential anode material},
author = {F. De Santiago and J. E. Gonz\'{a}lez and A. Miranda and A. Trejo and F. Salazar and L. A. P\'{e}rez and M. Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S2405829718313254},
doi = {https://doi.org/10.1016/j.ensm.2019.04.023},
issn = {2405-8297},
year = {2019},
date = {2019-01-01},
journal = {Energy Storage Materials},
volume = {20},
pages = {438-445},
abstract = {The need for better energy-storage materials has attracted much attention to the development of Li-ion battery electrodes. Si nanowires have been considered as alternative electrodes, however the effects of Li on their electronic band gap and mechanical properties have been scarcely studied. In this work, a density functional study of the electronic and mechanical properties of hydrogen passivated silicon nanowires (H-SiNWs) grown along the [001] direction is presented. The Li atoms are gradually inserted at interstitial positions or replacing surface H atoms. The results show that, for surface-lithiated H-SiNWs, the semiconducting band gap decreases when the concentration of Li atoms increases; whereas the H-SiNWs become metallic even with the addition of only one interstitial Li atom. The formation energy diminishes with the concentration of Li atoms for surface-lithiated H-SiNWs, whereas the contrary behavior is found in the interstitial-lithiated H-SiNWs. Furthermore, for the surface-lithiation case, the Li binding energy reveals the existence of SiLi bonds, whereas for the interstitial-lithiation case, the Li binding energy increases when the Li grows up to a critical concentration, where some SiSi bonds break. Finally, for the case of surface-lithiation, the Young's modulus (Y) increases with the concentration of Li, whereas for the interstitial-lithiation case, Y suffers a sudden diminution at a certain Li concentration due to the large internal mechanical stresses within the nanowire structure. These results should be considered when regarding H-SiNWs as potential electrodes in Li-ion battery anodes.},
keywords = {electronic properties, Li batteries, Silicon nanowires, Young's modulus},
pubstate = {published},
tppubtype = {article}
}
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