Obtuvo la Licenciatura en Física, la Maestría y el Doctorado en Ciencia e Ingeniería de Materiales en la UNAM. Es Profesor Titular C en el Instituto Politécnico Nacional en la ESIME-Culhuacan, donde formó y coordina el Grupo de Investigación en Nanociencias. Pertenece al Sistema Nacional de Investigadores (SNI)-Nivel 3, ha dirigido 16 tesis doctorales, una estancia sabática, una posdoctoral y tres estancias de investigación en el programa de retención del CONACyT, 29 tesis de maestría y 11 de licenciatura, tres de las cuales han obtenido el premio a la mejor tesis de maestría y de doctorado en el IPN y un premio a la mejor tesis doctoral por parte de la UNAM. Ha publicado 121 artículos en revistas internacionales indizadas en el Journal Citation Reports con un alto factor de impacto, así como 37 artículos in extenso como memorias de congresos. Sus trabajos de investigación se han presentado en más de 250 congresos nacionales e internacionales de reconocida calidad académica. Se ha desempeñado como revisor en revistas internacionales como Applied Surface Science, Nanoscale, Physica E, Physica B, Physica Status Solidi (b) así como el Journal of Energy Storage por citar algunas. Adicionalmente ha sido Responsable Técnico de proyectos financiados por el CONACyT, el ICyTDF y el IPN, además ha coordinado varios proyectos multidisciplinarios en el IPN. Fue Presidente de la División de Estado Sólido de la Sociedad Mexicana de Física. Pertenece a la Academia Mexicana de Ciencias. En su trayectoria docente en el IPN, participó en la creación de la carrera de Ingeniería en Computación, así como la Maestría en Ciencias de Ingeniería en Sistemas Energéticoas y fue Coordinador del Doctorado en Comunicaciones y Electrónica a este último se le otorgó la categoría de programa de Competencia Internacional como resultad ode la evaluación en el Programa Nacional de Posgrados de Calidad (PNPC) del CONACyT. Una de sus líneas de investigación son las propiedades electrónicas, ópticas y vibracionales de semiconductores nanoestructurados con aplicaciones en comunicaciones y electrónica, así como en el almacenamiento y conversión de energía.
Gonzalez, Mario; Salazar, Fernando; Trejo, Alejandro; Miranda, Álvaro; Nava, Rocío; Pérez, Luis Antonio; Cruz-Irisson, Miguel
Exploring the electronic and mechanical properties of lithium-decorated silicon carbide nanowires for energy storage Artículo de revista
En: Journal of Energy Storage, vol. 62, pp. 106840, 2023, ISSN: 2352-152X.
Resumen | Enlaces | BibTeX | Etiquetas: Anodes, Density Functional Theory, Lithium ion batteries, SiC nanowires
@article{GONZALEZ2023106840,
title = {Exploring the electronic and mechanical properties of lithium-decorated silicon carbide nanowires for energy storage},
author = {Mario Gonzalez and Fernando Salazar and Alejandro Trejo and \'{A}lvaro Miranda and Roc\'{i}o Nava and Luis Antonio P\'{e}rez and Miguel Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S2352152X23002372},
doi = {https://doi.org/10.1016/j.est.2023.106840},
issn = {2352-152X},
year = {2023},
date = {2023-01-01},
journal = {Journal of Energy Storage},
volume = {62},
pages = {106840},
abstract = {The high chemical stability of silicon carbide (SiC) is attractive to inhibit unwanted side chemical reaction and prolongate the cyclability performance of lithium ion batteries anodes. However, SiC has high surface lithiation energy barrier due to its intrinsic nature and the low electrical conductivity limited the application in this area. The surface modification of SiC is an alternative to boost the lithiation\textendashdelithiation kinetics. Hydrogen incorporation on SiC surface is extensively used in semiconductor industry to passivate electrically active centers. In this work, we present a theoretical study of the effect of surface lithium (Li) atoms on the electronic and mechanical properties of hydrogen passivated SiC nanowires (H-SiCNWs) with zinc-blende structure. The results show that the adsorption of Li on the carbon (C) atoms at the surface of the nanowire introduces new electronic states within the former band gap of the H-SiCNWs, whose main contribution comes from the C and silicon (Si) atoms in the valence and conduction bands, respectively. Moreover, the number of new bands within the former band gap increases as a function of the concentration of Li atoms and the systems remain as intrinsic semiconductors up to the maximum Li concentrations. The formation energy reveals that the stability of the nanowires increases when the concentration of Li atoms augments. Moreover, the values of the open circuit voltage are found between 1.6 and 1.9 V for all studied concentrations of Li atoms and morphologies. The charge population analysis indicates that the Li atoms give up charge to the C ones resulting in ionic bonds. On the other hand, the Young modulus of the H-SiCNWs increases when their diameter augments and their values are lower than that of the bulk SiC. Besides, the Young modulus slightly diminishes when the concentration of Li grows, then the mechanical resistance could offer a large useful life of the electrode. Finally, the maximum theoretical storage capacity values indicate that the SiC nanowires (SiCNWs) are good potential anodic materials for rechargeable Li-ion batteries.},
keywords = {Anodes, Density Functional Theory, Lithium ion batteries, SiC nanowires},
pubstate = {published},
tppubtype = {article}
}
Cuevas, José Luis; Santiago, Francisco; Ramírez, Jesús; Trejo, Alejandro; Miranda, Álvaro; Pérez, Luis Antonio; Cruz-Irisson, Miguel
First principles band gap engineering of [1 1 0] oriented 3C-SiC nanowires Artículo de revista
En: Computational Materials Science, vol. 142, pp. 268-276, 2018, ISSN: 0927-0256.
Resumen | Enlaces | BibTeX | Etiquetas: DFT, Formation energy, SiC nanowires, Surface passivation
@article{CUEVAS2018268,
title = {First principles band gap engineering of [1 1 0] oriented 3C-SiC nanowires},
author = {Jos\'{e} Luis Cuevas and Francisco Santiago and Jes\'{u}s Ram\'{i}rez and Alejandro Trejo and \'{A}lvaro Miranda and Luis Antonio P\'{e}rez and Miguel Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S0927025617305712},
doi = {https://doi.org/10.1016/j.commatsci.2017.10.021},
issn = {0927-0256},
year = {2018},
date = {2018-01-01},
journal = {Computational Materials Science},
volume = {142},
pages = {268-276},
abstract = {Silicon carbide nanowires offer excellent opportunities for technological applications under harsh environmental conditions, however, the 3C-SiC polytype nanowires, grown along the [1 1 0] crystallographic direction, have been rarely studied, as well as the effects of the surface passivation on their physical properties. This work addresses the effects of hydrogen passivation on the electronic band gap of silicon carbide nanowires (SiCNWs) grown along the [1 1 0] direction by means of Density Functional Theory. We compare the electronic properties of fully hydrogen-passivated SiCNWs in comparison to those of SiCNWs with a mixed passivation of oxygen and hydrogen by changing some of the surface dihydrides with SiOSi or COC bonds. The results show that regardless of the diameter and passivation, most of the nanowires have a direct band gap which suggests an increased optical activity. The surface COC bonds reduce the electronic band gap energy compared to that of the fully H-terminated phase, while the nanowires with SiOSi bonds have a larger band gap. The calculation of formation energies shows that the oxygen increases the chemical stability of the SiCNWs. These results indicate the possibility of band gap engineering on SiC nanostructures through surface passivation.},
keywords = {DFT, Formation energy, SiC nanowires, Surface passivation},
pubstate = {published},
tppubtype = {article}
}
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