2012
Trejo, A.; Miranda, A.; Rivera, L. Niño; Díaz-Méndez, A.; Cruz-Irisson, M.
Phonon optical modes and electronic properties in diamond nanowires Artículo de revista
En: Microelectronic Engineering, vol. 90, pp. 92-95, 2012, ISSN: 0167-9317, (Micro&Nano 2010).
Resumen | Enlaces | BibTeX | Etiquetas: Diamond, Nanowires, Phonons, Raman scattering, Tight-binding
@article{TREJO201292,
title = {Phonon optical modes and electronic properties in diamond nanowires},
author = {A. Trejo and A. Miranda and L. Ni\~{n}o Rivera and A. D\'{i}az-M\'{e}ndez and M. Cruz-Irisson},
url = {https://www.sciencedirect.com/science/article/pii/S016793171100476X},
doi = {https://doi.org/10.1016/j.mee.2011.04.052},
issn = {0167-9317},
year = {2012},
date = {2012-01-01},
journal = {Microelectronic Engineering},
volume = {90},
pages = {92-95},
abstract = {A local bond-polarization model based on the displacement\textendashdisplacement Green’s function and the Born potential are applied to study the confined optical phonons and Raman scattering of diamond nanowires (DNWs). Also, the electronic band structure of DNWs are investigated by means of a semi-empirical tight-binding approach and compared with density functional theory within local density approximation. The supercell technique is applied to model DNWs along [001] direction preserving the crystalline diamond atomic structure. The results of both phonons and electrons show a clear quantum confinement signature. Moreover, the highest energy Raman peak shows a shift towards low frequencies respect to the bulk crystalline diamond, in agreement with experimental data.},
note = {Micro\&Nano 2010},
keywords = {Diamond, Nanowires, Phonons, Raman scattering, Tight-binding},
pubstate = {published},
tppubtype = {article}
}
A local bond-polarization model based on the displacement–displacement Green’s function and the Born potential are applied to study the confined optical phonons and Raman scattering of diamond nanowires (DNWs). Also, the electronic band structure of DNWs are investigated by means of a semi-empirical tight-binding approach and compared with density functional theory within local density approximation. The supercell technique is applied to model DNWs along [001] direction preserving the crystalline diamond atomic structure. The results of both phonons and electrons show a clear quantum confinement signature. Moreover, the highest energy Raman peak shows a shift towards low frequencies respect to the bulk crystalline diamond, in agreement with experimental data.
2009
Cruz-Irisson, Miguel; Wang, Chu Min
Electronic and Vibrational Properties of Porous Silicon Artículo de revista
En: Journal of Nano Research, vol. 5, pp. 153–160, 2009.
Resumen | Enlaces | BibTeX | Etiquetas: Porous Silicon (PS), Raman scattering, Tight Binding
@article{cruz-irisson2009,
title = {Electronic and Vibrational Properties of Porous Silicon},
author = {Miguel Cruz-Irisson and Chu Min Wang},
doi = {10.4028/www.scientific.net/JNanoR.5.153},
year = {2009},
date = {2009-01-01},
urldate = {2009-01-01},
journal = {Journal of Nano Research},
volume = {5},
pages = {153\textendash160},
abstract = {For ordered porous silicon, the Born potential and phonon Green’s functions are used to investigate its Raman response, while the electronic band structure and dielectric function are studied by means of a sp3s* tight-binding supercell model, in which periodical pores are produced by removing columns of atoms along [001] direction from a crystalline Si structure and the pores surfaces are passivated by hydrogen atoms for the electronic band structure calculations. This supercell model emphasizes the interconnection between silicon nanocrystals, delocalizing the electronic and phononic states. However, the results of both elementary excitations show a clear quantum confinement signature, which is contrasted with that of nanowire systems. In addition, ab-initio calculations of small supercells are performed in order to verify the tight-binding results. The calculated dielectric function is compared with experimental data. Finally, a shift of the highest-frequency Raman peak towards lower energy is observed, in agreement with the experimental data.},
keywords = {Porous Silicon (PS), Raman scattering, Tight Binding},
pubstate = {published},
tppubtype = {article}
}
For ordered porous silicon, the Born potential and phonon Green’s functions are used to investigate its Raman response, while the electronic band structure and dielectric function are studied by means of a sp3s* tight-binding supercell model, in which periodical pores are produced by removing columns of atoms along [001] direction from a crystalline Si structure and the pores surfaces are passivated by hydrogen atoms for the electronic band structure calculations. This supercell model emphasizes the interconnection between silicon nanocrystals, delocalizing the electronic and phononic states. However, the results of both elementary excitations show a clear quantum confinement signature, which is contrasted with that of nanowire systems. In addition, ab-initio calculations of small supercells are performed in order to verify the tight-binding results. The calculated dielectric function is compared with experimental data. Finally, a shift of the highest-frequency Raman peak towards lower energy is observed, in agreement with the experimental data.
2008
Alfaro, Pedro; Cruz, Miguel; Wang, Chumin
Vibrational states in low-dimensional structures: An application to silicon quantum wires Artículo de revista
En: Microelectronics Journal, vol. 39, no 3, pp. 472-474, 2008, ISSN: 1879-2391, (The Sixth International Conference on Low Dimensional Structures and Devices).
Resumen | Enlaces | BibTeX | Etiquetas: Phonons, Raman scattering, Silicon nanowires
@article{ALFARO2008472,
title = {Vibrational states in low-dimensional structures: An application to silicon quantum wires},
author = {Pedro Alfaro and Miguel Cruz and Chumin Wang},
url = {https://www.sciencedirect.com/science/article/pii/S0026269207001711},
doi = {https://doi.org/10.1016/j.mejo.2007.07.082},
issn = {1879-2391},
year = {2008},
date = {2008-01-01},
urldate = {2008-01-01},
journal = {Microelectronics Journal},
volume = {39},
number = {3},
pages = {472-474},
abstract = {The Raman scattering in Si nanowires is studied by means of the local bond-polarization model based on the displacement\textendashdisplacement Green\'s function within the linear response theory. In this study, the Born potential, including central and non-central interatomic forces, and a supercell model are used. The results show a notable shift of the main Raman peak towards lower energies, in comparison with the bulk crystalline Si case. This shift is compared with the experimental data and discussed within the quantum confinement framework.},
note = {The Sixth International Conference on Low Dimensional Structures and Devices},
keywords = {Phonons, Raman scattering, Silicon nanowires},
pubstate = {published},
tppubtype = {article}
}
The Raman scattering in Si nanowires is studied by means of the local bond-polarization model based on the displacement–displacement Green's function within the linear response theory. In this study, the Born potential, including central and non-central interatomic forces, and a supercell model are used. The results show a notable shift of the main Raman peak towards lower energies, in comparison with the bulk crystalline Si case. This shift is compared with the experimental data and discussed within the quantum confinement framework.
