@article{https://doi.org/10.1002/pssa.201900590,

title = {Mechanical and Electronic Properties of Tin Carbide Nanowires},

author = {Alma L. Marcos-Viquez and \'{A}lvaro Miranda and Miguel Cruz-Irisson and Luis A. P\'{e}rez},

url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201900590},

doi = {https://doi.org/10.1002/pssa.201900590},

year  = {2020},

date = {2020-01-01},

journal = {physica status solidi (a)},

volume = {217},

number = {5},

pages = {1900590},

abstract = {Herein, the mechanical and electronic properties of tin carbide nanowires (NWs) with zinc-blende structure are theoretically investigated using density functional calculations within the generalized gradient approximation. The axes of the studied NWs, which have hexagonal cross sections of six different sizes, are taken along the [111] crystallographic direction, and their surfaces are passivated with either hydrogen or fluorine. The effects of diameter size and chemical passivation on the cohesive energy, electronic structure, and Young's modulus of the various studied NWs are discussed. Moreover, the results obtained are compared with those corresponding to silicon and silicon carbide NWs with similar structures. Finally, the adsorption of carbon monoxide (CO) and nitric oxide (NO) molecules on tin carbide NWs is addressed.},

keywords = {density functional theory calculations, electronic band structures, Gas sensors, silicon carbide nanowires, tin carbide nanowires, Young's moduli},

pubstate = {published},

tppubtype = {article}

}

@article{https://doi.org/10.1002/qua.22647,

title = {Chemical surface passivation of 3C-SiC nanocrystals: A first-principle study},

author = {A. Trejo and M. Calvino and M. Cruz-Irisson},

url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/qua.22647},

doi = {https://doi.org/10.1002/qua.22647},

year  = {2010},

date = {2010-01-01},

journal = {International Journal of Quantum Chemistry},

volume = {110},

number = {13},

pages = {2455-2461},

abstract = {Abstract The effect of the chemical surface passivation, with hydrogen atoms, on the energy band gap of porous cubic silicon carbide (PSiC) was investigated. The pores are modeled by means of the supercell technique, in which columns of Si and/or C atoms are removed along the [001] direction. Within this supercell model, morphology effects can be analyzed in detail. The electronic band structure is performed using the density functional theory based on the generalized gradient approximation. Two types of pores are studied: C-rich and Si-rich pores surface. The enlargement of energy band gap is greater in the C-rich than Si-rich pores surface. This supercell model emphasizes the interconnection between 3C-SiC nanocrystals, delocalizing the electronic states. However, the results show a clear quantum confinement signature, which is contrasted with that of nanowire systems. The calculation shows a significant response to changes in surface passivation with hydrogen. The chemical tuning of the band gap opens the possibility plenty applications in nanotechnology. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem 110:2455\textendash2461, 2010},

keywords = {Density Functional Theory, Porous silicon carbide, silicon carbide nanowires},

pubstate = {published},

tppubtype = {article}

}